Center for the Radiation Studies and Solutions

Abstract

The influence of the radiation to the performance of the GaN-based and GaAs-based electronic devices was investigated extensively. In order to study the effects upon various devices, several novel device structures (such as p-capped AlGaN/GaN HEMTs and GOI GaAs pHEMTs) as well as new processing techniques were developed. The radiation induced traps, the forward and reserved biased currents of the diodes and the DC current-voltage characteristics of HEMTs and HBTs were investigated as a function of gamma-ray and proton radiation energy and total dose. The degradation mechanisms were discussed. The research indicated that GaN has an intrinsically low susceptibility to radiation-induced material degradation and GaN-based electronic devices appear to be excellent candidates for use in space systems.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1999
Accession Number
ADA431032

Entities

People

  • Umesh Mishra

Organizations

  • University of California, Santa Barbara

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Synthesis
  • Chemistry
  • Compound Semiconductors
  • Electronics Industry
  • Electronics Laboratories
  • Field Effect Transistors
  • Gamma Rays
  • High Electron Mobility Transistors
  • Material Degradation Processes
  • Materials
  • Materials Science
  • Metal-Semiconductor Junctions
  • Optical Properties
  • Power Electronics
  • Schottky Diodes
  • Semiconductors
  • Two Dimensional

Readers

  • Nuclear and Radiation Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Space
  • Space - Hall-Effect Thruster