High Throughput Synthesis of Terahertz Quantum Cascade Lasers
Abstract
This Phase I STTR program (Topic #AF03T024) was aimed at the design and synthesis of an AlGaAs/ GaAs-based epitaxial layer structure for terahertz quantum cascade lasers (THz QC lasers) that can be grown by metalorganic chemical vapor deposition (MOCVD). The program succeeded in growing two different THz QC laser structures by MOCVD. The wafer growths of these 10 micron thick epitaxial structures by MOCVD required 5 hours of growth time, compared to one day for the competing MBE growth technology. This was the first successful demonstration of an MOCVD-grown terahertz laser structure. Verification of the epitaxial layer parameters was carried out by scanning transmission electron microscopy, verifying conformance to design specifications within 0.16%. A highly efficient terahertz laser design, consisting of a metal-semiconductor-metal (MSM), planar waveguide structure, was theoretically analyzed and found to be the best design for low threshold current and high laser operating temperature. Phase I demonstrated that it is possible to grow high-quality THz QC laser material by the production-amenable, high wafer capacity MOCVD technology, while Phase II will utilize this design for laser fabrication.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 21, 2004
- Accession Number
- ADA431209
Entities
People
- Kurt J. Linden