Investigation of Semiconductor Nitride Deposition & Characterization on Defect-Void GaN Templates & ZnO Substrates
Abstract
A variety of approaches have been taken to enhance GaN quality during epitaxy and lead zirconate titanate (PZT) structures for sensors and data storage. GaN regrown on KOH etched templates with defective material removed has shown improved optical quality and demonstrated lateral growth by MBE. The same also carried out using MOCVD. GaN layers were also grown on closely lattice and stacking matched ZnO substrates. In this vein, we developed a high temperature thermal treatment for ZnO substrate. After 3 hours annealing in the air at 1050 deg C, all the surface damages were removed and straight, parallel terrace features were formed on the surface as judged by AFM images, which can facilitate smooth 2D growth and reduce column formation during the growth of GaN epilayers without the deleterious effects of a damaged substrate surface. Thin films of PZT were grown by sol-gel techniques on sapphire, Pt/Ti/SiO2/Si and Ir/Ti/SiO2/Si. For electrical characterization, the top electrodes for Au/PZT/Pt and Au/PZT/Ir capacitors were fabricated by photolithography and liftoff process, The polarization hysteresis and fatigue characteristics were measured by using a ferroelectric tester.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 11, 2005
- Accession Number
- ADA431651
Entities
People
- Hadis H. Morkoç̌
Organizations
- Virginia Commonwealth University