Evidence for Hole and Electron Trapping in Plasma Deposited ZrO(2) Thin Films

Abstract

We have observed electron and hole trapping phenomena in thin films of ZrO?sub 2! obtained by plasma assisted deposition. Limited thickness dependent measurements suggest that the holes are trapped uniformly through the film while the electrons trap at the ZrO?sub 2!/Si interface. Relaxation of the trapped holes occurs rapidly after removal of negative stress (^90% in 15 min), while electron relaxation postpositive stress occurs more slowly (^10% in 100min). Cycling between states of positive trapped charge and negative trapped charge by application of the appropriate stressing voltage was observed.

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Document Details

Document Type
Technical Report
Publication Date
Oct 15, 2001
Accession Number
ADA431899

Entities

People

  • J. R. Chavez
  • L. Koltunski
  • R. A. Devine

Organizations

  • Air Force Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Air Force Research Laboratories
  • Capacitors
  • Charge Density
  • Copyrights
  • Dielectrics
  • Electric Fields
  • Electrons
  • Field Effect Transistors
  • Films
  • Materials
  • Measurement
  • Oxides
  • Semiconductor Devices
  • Semiconductors
  • Thickness
  • Thin Films

Readers

  • Mechanical Engineering/Mechanics of Materials.
  • Pulsed Power and Plasma Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene