Room Temperature Devices of Dilute Magnetic Semiconductors

Abstract

We report on the dependence of ferromagnetic properties of MOCVD grown GaMnN films on carrier transfer across adjacent layers. We found that the magnetic properties of GaMnN, as a part of GaMnN/GaN:Mg heterostructures depends on the thickness of both the GaMnN film and the adjacent GaN:Mg layer and on the presence of a wide bandgap barrier at this interface. These results are explained based on the occupancy of the Mn energy band and how the occupancy can be altered due to carrier transfer at the GaMnN/GaN:Mg interfaces.

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Document Details

Document Type
Technical Report
Publication Date
Apr 22, 2005
Accession Number
ADA432896

Entities

People

  • Nadia A. El-masry
  • S. M. Bedair

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Availability
  • Charge Carriers
  • Charge Transfer
  • Chemical Vapor Deposition
  • Electrons
  • Energy Bands
  • Energy Levels
  • Ferromagnetism
  • Heterojunctions
  • Low Temperature
  • Magnetic Moments
  • Magnetic Properties
  • Magnetization
  • Magnetometers
  • Mass Spectroscopy
  • Materials
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Superconducting Magnet Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene