WBGS Epitaxial Materials Development and Scale Up for RF/Microwave-Millimeter Wave Devices
Abstract
The project aimed at significant improvement of the III-nitride based epitaxial materials and device design and fabrication for high-power heterostructure field-effect transistors (HFETs). The key innovative approaches implemented in this program include novel pulsed atomic layer epitaxy (PALE) technique to grow the buffer layer with low defect density, improved epitaxial uniformity in multi-wafer MOCVD reactor, growing HFET wafers with the sheet resistance below 300 Ohm/square. Design improvements include double- heterostructure devices (DHFET) with InGaN electron confinement layer, insulated gate design using SiO2 gate insulator (MOSDHFETs) and innovative field-plate design. These new devices demonstrated high RF powers 15-20 W/mm at a drain bias of 50-65 V, and good parameter stability at 19 W/mm CW powers as confirmed by 100+ hours testing.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 03, 2005
- Accession Number
- ADA432964
Entities
People
- G. Simin
- M. A. Khan
- Michael S. Shur
- R. Gaska
Organizations
- University of South Carolina