Empirical Pseudopotential Modeling of Antimonide-Based III-V Structures

Abstract

This report results from a contract tasking National Institute for the Physics of Matter (INFM) as follows: The contractor will make a detailed comparison of the conventional Empirical Pseudopotential Model (EPM) with the Superlattice Empirical Pseudopotential Model (SEPM) developed at AFRL, by comparing the predictions of the two methods for the transition energies in a number of well characterized and microscopically controlled InAs/GaSb Type-II superlattice samples. The comparison between the two different implementations of the empirical pseudopotential method and with the experiment will lead to a better understanding of the role of the transition energies and dipole matrix elements of the interface bonds in the no-common-atom InAs/GaSb superlattices and how they can be adequately described by the theory. This is a necessary step in the direction of making the EPM a reliable tool for analyzing and predicting behavior and performances of the devices based on antimonide III-V semiconductors.

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Document Details

Document Type
Technical Report
Publication Date
Jan 13, 2005
Accession Number
ADA433258

Entities

People

  • Rita Magri

Tags

Communities of Interest

  • Air Platforms
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Conduction Bands
  • Crystal Lattices
  • Density Functional Theory
  • Energy
  • Energy Bands
  • Energy Gaps
  • First Principles Calculations
  • Materials
  • Optical Properties
  • Phase Diagrams
  • Phase Transformations
  • Semiconductors
  • Superlattices
  • Transitions
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Quantum Chemistry
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Theoretical Analysis.

Technology Areas

  • Microelectronics