Improved InGaAs Metal-Semiconductor-Metal OE Mixers Using Submicron Schottky Contacts

Abstract

InGaAs-based Metal Semiconductor Metal (MSM) Photodetectors were fabricated and tested as photodetectors and Opto-electronic mixers. A comparison of various processing schemes for MSM InAlAs/InGaAs photodetectors on InP substrates was conducted to minimize the dark current. InAlAs Schottky Enhanced Layers (SEL) was employed on the InGaAs-based MSMs to enhance the barrier height to reduce the dark current. The effect of SEL thickness on the performance of OE mixer was studied. The experimental results were compared to those simulated with CFDRC software.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 2004
Accession Number
ADA433466

Entities

People

  • Fan Ren
  • Hongen Shen
  • Keith Aliberti
  • Rishabh Mehandru
  • S. J. Pearton
  • Soohwan Jang

Organizations

  • University of Florida

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Engineering
  • Detection
  • Detectors
  • Dielectric Films
  • Equations
  • Frequency
  • Laser Diodes
  • Lasers
  • Light Pulses
  • Materials
  • Materials Science
  • Metal-Semiconductor Junctions
  • Metal-Semiconductor-Metal Photodetectors
  • Photodetectors
  • Semiconductor Devices
  • Semiconductor Lasers
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics