Magnetic and Optical Properties of MN-Doped GaN Thin Films and P-I-N Devices

Abstract

In this paper, we report on the growth and characterization of single crystal GaMnN thin films and p-i-n junction devices grown by metal-organic chemical vapor deposition (MOCVD). Single crystal GaMnN films were achieved by optimizing the growth temperature, growth rate and the Mn:Ga gas phase ratio. A growth window for obtaining single crystal Ga(sub 1-x)Mn(sub x)N with 0.006=<x=<0.023 was found within a temperature range of 850 degree C<T(sub G)<1040 degree C, as determined by transmission electron microscopy. Temperature dependent superconducting quantum interference device (SQUID) measurements confirmed the absence of superparamagnetism and spin glass behavior within the films and identified Curie temperatures between 228K and 500K for GaMnN.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 2004
Accession Number
ADA433499

Entities

People

  • E. A. Berkman
  • F. Erdem Arkun
  • J. M. Zavada
  • M. J. Reed
  • M. L. Reed
  • M. O. Luen
  • N. A. El-masry
  • S. M. Bedair

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Curie Temperature
  • Emission
  • Energy Bands
  • Energy Levels
  • Fermi Levels
  • Ferromagnetic Materials
  • Ferromagnetism
  • Heterojunctions
  • Magnetic Properties
  • Magnetometers
  • Materials
  • Materials Science
  • Measurement
  • Optical Properties
  • Semiconductor Devices
  • Semiconductors
  • Solid State Physics

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Superconducting Magnet Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing