Ultrafast Optical Characterization of Wide Bandgap Semiconductors and Polyatomic Molecules

Abstract

The focus of this effort was to measure the carrier dynamics in wide bandgap III-nitride materials. Measurements of carrier capture and recombination in InGaN and AlGaN/GaN MQWs revealed a similar carrier capture time for both materials but a recombination time in the AlGaN/GaN system at least a factor of ten faster. Studies of surface plasmonenhanced recombination rates in GaN QWs indicated an acceleration of recombination rates by a factor of 100 simply by placing a silver coating <10 nm from the QW. GaN quantum dot optical properties were studied using both ultrafast and continuous wave techniques. The interplay of carrier confinement and piezoelectric field was ascertained in the manner in which it affected the luminescence wavelength and lifetimes. Generally speaking, the larger QDs demonstrated superior optical performance, while smaller QDs behaved much like quantum wells of the same thickness.

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Document Details

Document Type
Technical Report
Publication Date
May 19, 2005
Accession Number
ADA433719

Entities

People

  • Henry O. Everitt

Organizations

  • Duke University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Continuous Waves
  • Laser Science
  • Lasers
  • Materials
  • Measurement
  • Optical Phenomena
  • Optical Properties
  • Optics
  • Polyatomic Molecules
  • Quantum Dots
  • Quantum Electronics
  • Quantum Wells
  • Refractive Index
  • Semiconductors
  • Subatomic Particles
  • Surface Plasmons
  • Wide Bandgap Semiconductors

Fields of Study

  • Materials science

Readers

  • Mathematics or Statistics
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing