A Model for Dielectric-Charging Effects in RF MEMS Capacitive Switches
Abstract
For the first time, charging and discharging of traps in the dielectric of state-of-the-art RF MEMS capacitive switches were characterized in detail. Densities and time constants of different trap species were extracted under different control voltages. It was found that, while charging and discharging time constants are relatively independent of control voltage, steady-state charge densities increase exponentially with control voltage. A charge model was constructed to predict the amount of charge injected into the dielectric and the corresponding shift in actuation voltage. The model was verified against the actuation-voltage shift under accelerated test conditions and found to be in good agreement with the experimental data. Both modeled and measured data suggested that the dielectric-charging effects can be accelerated by duty cycle and peak voltage of the actuation waveform.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 2005
- Accession Number
- ADA435056
Entities
People
- Charles L. Goldsmith
- David Forehand
- James C. M. Hwang
- Xiaobin Yuan
Organizations
- Lehigh University