Mixed Anion Heterostructure Materials
Abstract
Inhibition of anion exchange reactions during molecular beam epitaxy is critical to the synthesis of mixed-anion heterojunction interfaces. These interfaces are the basic structural building blocks of advanced electronic and optoelectronic devices that are critical to DoD applications. Anion exchange is a key surface and subsurface reaction leading to interfacial intermixing. Other related reactions include segregation, diffusion, and clustering. Interfacial intermixing results in uncontrolled strain and related bandstructure modifications that degrade device performance, reliability, and manufacturability. This project represents a study, both experimentally and theoretically, of the fundamental structural properties and process conditions that drive anion exchange and related reactions. Our techniques are applied to As-, P-, and Sb-based mixed anion heterostructures, as well as to enable the control of anion exchange to Sb/As device materials.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 2004
- Accession Number
- ADA436288
Entities
People
- April S. Brown
- Gary S. May
- Z. L. Wang
Organizations
- Georgia Tech Research Corporation