Radiation-Induced Charge Trapping in Low-kappa Silsesquioxane-Based Intermetal Dielectric Films
Abstract
Radiation-induced charge trapping has been studied in cured hydrogen silsesquioxane low dielectric constant films subjected to electric fields during the radiation process. Evidence is found for electric field-dependent negative charge trapping with a dose ?sup 0.47! variation. The possible origin of the negative charge trapping is discussed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 2002
- Accession Number
- ADA437343
Entities
People
- J. R. Chavez
- J. W. Tringe
- R. A. Devine
Organizations
- Air Force Research Laboratory