Model-Based Simulations to Engineer Nanoporous Thin Films
Abstract
A model-based simulation (MBS) capability for tailoring the fabrication processes and the properties of wide band gap semiconductors thin films (TF) with engineered nanoscale porosity has been achieved in two ways: 1. By using molecular dynamics simulations (MDS) to relate a given set of deposition parameters to the resulting microstructure. 2. By developing a novel bending theory for a continuum body with microstructure.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 2004
- Accession Number
- ADA438559
Entities
People
- Francesco Costanzo
Organizations
- Pennsylvania State University