Voltage Tunable Two-Color Infrared Detection Using Semiconductor Superlattices
Abstract
We demonstrate a voltage tunable two-color quantum-well infrared photodetector (QWIP) that consists of multiple periods of two distinct AlGaAs/GaAs superlattices separated by AlGaAs blocking barriers on one side and heavily doped GaAs layers on the other side. The detection peak switches from 9.5 mu m under large positive bias to 6 mu m under negative bias. The background-limited temperature is 55 K for 9.5 mu m detection and 80 K for 6 mu m detection. We also demonstrate that the corrugated-QWIP geometry is suitable for coupling normally incident light into the detector.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 22, 2003
- Accession Number
- ADA438861
Entities
People
- D. C. Tsui
- J. L. Reno
- K K Choi
Organizations
- Princeton University