Silicon Quantum Information Processing

Abstract

The initial aim of the programme was to demonstrate three qubits using Na donors in Si MOSFETs by the end of the programme. The initial objectives can be summarised as follows:- 2.1 Fabricate a single electron transistor using AFM lithography on the gate of a MOSFET. This is the 2.2 Fabricate a MOSFET with a determined number 2.3 Fabricate and detect the positioning of a single Na+ ion in a predetermined position to allow 2.4 Measure the T2 decoherence time for Na in Si using the temperature dependence of the impurity 2.5 Provide a model for the Na donor fabrication.

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Document Details

Document Type
Technical Report
Publication Date
Nov 07, 2005
Accession Number
ADA440299

Entities

People

  • D. J. Paul

Organizations

  • University of Cambridge

Tags

Communities of Interest

  • Advanced Electronics
  • C4I
  • Materials and Manufacturing Processes
  • Space

DTIC Thesaurus Topics

  • Computations
  • Conduction Bands
  • Electrons
  • Energy Bands
  • Fermi Levels
  • Frequency
  • High Temperature
  • Impurities
  • Information Processing
  • Low Temperature
  • Measurement
  • Metal-Oxide-Semiconductor Field-Effect Transistors
  • Quantum Computing
  • Quantum Information
  • Resonance
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Quantum Computing
  • Quantum Science - Quantum Dots