Long-Wave (8 - 12 Micrometers) Quantum-Dot Infrared Photodetectors

Abstract

This is the Final Report of ARO Grant No. DAADl9-02-l-0437. It is a report on the characteristics of(InGa)As/GaAs long-wave (8-12 um) quantum-dot infrared photodetector structures. Pcak responsivities and dctectivitics were measured using a calibrated black body source. The results of this work indicate that for the structures characterized here, the maximum operating temperature is limited to %O5 K. No effort was made in the original design of the device structure for higher temperature operation. For operation at temperatures higher than this, one must investigate other device structures; such structures have been identified and will be the subject of future work. The work reported here has paved the way to the identification of candidate device structures for high operating temperature (HOT) quantum-dot detector

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Document Details

Document Type
Technical Report
Publication Date
Sep 28, 2005
Accession Number
ADA440749

Entities

People

  • D. Pal
  • E. Towe

Organizations

  • Carnegie Mellon University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Absorption Spectra
  • Analyzers
  • Band Gaps
  • Detectors
  • Electrons
  • Energy Bands
  • Energy Levels
  • Free Electrons
  • Frequency
  • Ground State
  • Heat Of Activation
  • Measurement
  • Quantum Dots
  • Semiconductors
  • Spectra
  • Transitions

Fields of Study

  • Materials science

Readers

  • Astronomy and Astrophysics.
  • Research Science/Academic Research
  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing