Development of a Noise Intrinsic Equivalent Circuit Model Using Experimental and Numerical Techniques

Abstract

Noise equivalent circuit models in gallium nitride high electron mobility transistors have been developed using both experimental and numerical approaches. This work serves two primary purposes, to guide device development by establishing the primary causes for noise, and as a basis for models that will be used in transmitter and receiver design. The results of this work are applicable to noise mechanisms in other materials and devices.

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Document Details

Document Type
Technical Report
Publication Date
Nov 17, 2005
Accession Number
ADA441362

Entities

People

  • Kevin J. Webb

Organizations

  • Purdue University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Circuits
  • Compound Semiconductors
  • Electron Mobility
  • Electronics Laboratories
  • Electrons
  • Elements
  • Equivalent Circuits
  • Field Effect Transistors
  • Gallium Nitrides
  • High Electron Mobility Transistors
  • Metals
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Transistors
  • Two Dimensional

Readers

  • Acoustics.
  • Computational Modeling and Simulation
  • Integrated Circuit Design and Technology.

Technology Areas

  • Microelectronics