Characterization of Dislocation Core Structures in BCC Metals

Abstract

The scientific aim of this study was to use state-of-the-art TEM techniques to experimentally describe dislocation core structures in bcc metals through experimental characterization of screw dislocations in single-crystalline Mo. Methods were developed for deriving localized electron structure data from electron energy loss spectra (EELS) taken from perfect lattice regions and along dislocations and low angle boundaries in ordered NiAl. Significant changes in the fine structure of the NiL edge were associated with <001> dislocations in NiAl and comparisons with first-principles were used to characterize localized electronic structure and bonding in the vicinity of this dislocation. However, difficulties associated with the position of the energy edges for Mo precluded application of this technique to the study of 1/2<111> screw dislocations in single-crystalline Mo. For this reason, the majority of this study focused on: direct HREM observations of the atomic columns surrounding 1/2<111> screw dislocations in Mo, characterization of the displacement fields associated with these dislocations, mitigation of experimental noise, and comparison of the experimental observations with theoretically predicted dislocation structures.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Aug 30, 2004
Accession Number
ADA443132

Entities

People

  • Kevin J. Hemker

Organizations

  • Johns Hopkins University

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Atomic Structure
  • Background Noise
  • Boundaries
  • Crystal Structure
  • Displacement
  • Electron Energy
  • Electron Microscopes
  • Electrons
  • Energy
  • Low Angles
  • Materials
  • Materials Science
  • Mechanical Properties
  • Observation
  • Simulations
  • Spectra
  • Two Dimensional

Readers

  • Materials Science and Engineering.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics