Development of High-Temperature, High-Power, High-Efficiency, High-Voltage Converters Using Silicon Carbide (SiC) Delivery Order Delivery Order 0002: Critical Analysis of SiC VJFET Design and Performance Based Upon Material and Device Properties

Abstract

Silicon carbide as a semiconductor material possesses several significant physical properties which make it superior for applications to high power devices. This report documents the efforts to develop, demonstrate, and optimize the design and fabrication methodologies for the realization of power vertical junction field effect transistors in the 4H-polytype of silicon carbide. Theoretical prediction and modeling simulation, incorporating all the significant SiC specific device physics, are utilized to develop a design methodology which is to ultimately be used for device fabrication. The results illustrate that good agreement between theoretical prediction and accurately modeled simulations can be achieved and enable the forecasting of device performance as a function of temperature, design modification, and variations in material transport characteristics.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 2005
Accession Number
ADA443645

Entities

People

  • Michael Mazzola
  • Yunmo Sung

Organizations

  • Mississippi State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Bipolar Junction Transistors
  • Ceramic Materials
  • Crystal Structure
  • Electronics Laboratories
  • Energy Bands
  • Field Effect Transistors
  • High Temperature
  • Materials
  • Metal-Semiconductor Junctions
  • Neural Networks
  • Physical Properties
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Transistors

Fields of Study

  • Materials science

Readers

  • Computational Modeling and Simulation
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics