Optimized Performance GaAs-Based Diode Lasers: Reliable 800-nm 125W Bars and 83.5% Efficient 975-nm Single Emitters

Abstract

GaAs-based high power diode bars produce wavelengths in the range of 780 to 980 nm and are widely used for pumping a broad range of rare earth doped solid-state lasers. As the markets for these laser systems mature, diode lasers that operate at higher power levels, greater overall efficiency, and higher reliability are in high demand. In this paper we report efficiencies of up to 83.5% in the 9xx-nm band, continuous wave power levels over 360-Watts in the 8xx-nm band, and reliable operation at 125-Watts.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2005
Accession Number
ADA444834

Entities

People

  • Jason Farmer
  • Jun Wang
  • Mark Defranza
  • Mark Devito
  • Mike Grimshaw
  • Paul Crump
  • Shiguo Zhang
  • Suhit Das
  • Trevor Crump
  • Weimin Dong

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Continuous Waves
  • Efficiency
  • Electronics
  • Electronics Industry
  • Laser Arrays
  • Laser Diodes
  • Laser Materials
  • Lasers
  • Materials
  • Peak Power
  • Photonics
  • Power Levels
  • Reliability
  • Semiconductor Devices
  • Semiconductor Lasers
  • Semiconductors
  • Solid State Lasers

Readers

  • Electronics Engineering
  • Molecular Photonics/Laser Physics
  • Solar Photovoltaics and Thermoelectric Devices.

Technology Areas

  • Directed Energy