Hall Mobility of Amorphous Ge2Sb2Te5

Abstract

The electrical conductivity, Seebeck coefficient, and Hall coefficient of 3 micron thick films of amorphous Ge2Sb2Te5 have been measured as functions of temperature from room temperature down to as low as 200 K. The electrical conductivity manifests an Arrhenius behavior. The Seebeck coefficient is p-type with behavior indicative of multi-band transport. The Hall mobility is n-type and low (near 0.07 cm2/V sec at room temperature).

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Document Details

Document Type
Technical Report
Publication Date
Jan 06, 2006
Accession Number
ADA444972

Entities

People

  • David Emin
  • Heng Li
  • S. A. Baily

Organizations

  • University of New Mexico

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Air Force Research Laboratories
  • Charge Carriers
  • Coefficients
  • Conductivity
  • Electrical Conductivity
  • Films
  • Governments
  • Military Research
  • Mobility
  • New Mexico
  • Semiconductors
  • Spacecraft
  • Steady State
  • Thick Films
  • Transport Ships
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Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Mathematics or Statistics