The Importance of Network Structure in High-K Dielectrics: LaAlO3, Pr2O3, and Ta2O5

Abstract

Measurements of the dielectric constant of amorphous and crystalline Pr2O3 are reported. The high value -25 for the polycrystalline phase is discussed in terms or the network structure and comparison is made with heavy rare-earth oxide values. The specific cases of LaAlO1 and Ta2O5 are also discussed and the role of network structure evidenced and elucidated. A potential route to finding high kappa materials suitable for microelectronics applications is suggested.

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Document Details

Document Type
Technical Report
Publication Date
Aug 19, 2005
Accession Number
ADA445149

Entities

People

  • R. A. Devine
  • T. Busani

Organizations

  • Air Force Research Laboratory

Tags

DTIC Thesaurus Topics

  • Air Force
  • Air Force Research Laboratories
  • Dielectric Permittivity
  • Dielectrics
  • Diffraction
  • Electronics
  • Field Effect Transistors
  • Films
  • Materials
  • Materials Laboratories
  • Measurement
  • Metal Oxide Semiconductors
  • Microelectronics
  • Polycrystals
  • Refractive Index
  • Semiconductors
  • X Rays

Readers

  • Computational Modeling and Simulation
  • Materials Science and Engineering.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene