Terahertz Radiation Emitters from Narrow-Gap Semiconductors

Abstract

This report results from a contract tasking Semiconductor Physics Institute as follows: The grantee will investigate optimizing material parameters of low-temperature grown GaAs for efficient THz emitters and detectors.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2005
Accession Number
ADA445370

Entities

People

  • Arunas Krotkus

Organizations

  • Semiconductor Physics Institute

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Charge Carriers
  • Compound Semiconductors
  • Conduction Bands
  • Crystal Lattice Vibrations
  • Detection
  • Detectors
  • Electromagnetic Radiation
  • Energy Bands
  • Laser Pulses
  • Materials
  • Narrow Band Gap Semiconductors
  • Semiconductor Physics
  • Semiconductors
  • Solid State Physics
  • Terahertz Radiation

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Research Science/Academic Research

Technology Areas

  • Microelectronics