Real-time Optical Control of Ga(1-x)In(x)P Film Growth

Abstract

This paper describes results on open- and closed-loop controlled growth of epitaxial GaP/Ga(1-x)In(x)P heterostructures on Si(001) substrates. The layers are grown in a low pressure pulsed chemical beam epitaxy (PCBE) reactor utilizing real time optical p-polarized reflectance (PRS) probing. The results of the implemented closed loop controlled growth favorably compare to the films grown using pre-designed source injection profiles based on an experimental data base.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1999
Accession Number
ADA445705

Entities

People

  • I. Lauko
  • Kazufumi Ito
  • N. Dietz
  • V. Woods

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Computations
  • Control Systems
  • Databases
  • Dielectric Permittivity
  • Equations
  • Films
  • Flow Rate
  • Kinetics
  • Materials Science
  • Measurement
  • North Carolina
  • Quantum Electronics
  • Reflectance
  • Semiconductors
  • Spectroscopy
  • Surface Reactions
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Robotics and Automation.
  • Semiconductor Device Technology
  • Thin Film Deposition Science.