A Model to Predict Temperature Acceleration of Dielectric-Charging Effects in RF MEMS Capacitive Switches (Preprint)

Abstract

Temperature acceleration of dielectric-charging effects in state-of-the-art RF MEMS capacitive switches was characterized and modeled. From the measured charging and discharging transient currents across the switching dielectric, densities and time constants of traps in the dielectric were extracted under different temperatures. It was found that, while charging and discharging time constants are relatively independent of temperature, steady-state charge densities increase with temperature. A charging model was constructed to predict the amount of charge injected into the dielectric and the corresponding shift in actuation voltage under different temperatures. Good agreement was obtained between the model prediction and experimental data.

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 2005
Accession Number
ADA446285

Entities

People

  • Charles L. Goldsmith
  • David Forehand
  • James C. M. Hwang
  • Xiaobin Yuan

Organizations

  • Lehigh University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Agreements
  • Air Force
  • Air Force Research Laboratories
  • Capacitors
  • Charge Density
  • Contracts
  • Dielectric Permittivity
  • Dielectrics
  • Electrodes
  • Experimental Data
  • Exponential Functions
  • Government Procurement
  • Governments
  • Microelectromechanical Systems
  • Military Research
  • Steady State
  • Switches

Readers

  • Integrated Circuit Design and Technology.
  • Plasma Physics.