Research and Development of Silicon Carbide (SiC) Avalanche Sharpeners for Picosecond Range, High Power Switches

Abstract

This report results from a contract tasking loffe Institute as follows: The Grantee will develop, fabricate, test, and characterize 4H-SiC power semiconductor switches operating in picosecond range of switch time. Special 4H-SiC multi-layered junction structures, such as diode structures (p+nn+-type) and triode structures (p+np+- and n+pn+-type) will be fabricated and tested as avalanche sharpeners.

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Document Details

Document Type
Technical Report
Publication Date
Dec 20, 2005
Accession Number
ADA446742

Entities

People

  • Igor V. Grekhov

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Electric Fields
  • Electron Holes
  • Fabrication
  • Guard Rings
  • High Voltage
  • Mass Spectrometry
  • Materials
  • Materials Science
  • P-N Junctions
  • Picosecond Time
  • Semiconductor Devices
  • Semiconductors
  • Sharpeners
  • Silicon
  • Silicon Carbide
  • Solid State Electronics

Readers

  • Electrical Engineering
  • Semiconductor Device Technology
  • Technical Research and Report Writing.

Technology Areas

  • Microelectronics