Mid-Infrared Quantum Dot Cascade Lasers

Abstract

This project conducts research necessary to design, growth, and demonstrate laser action in semiconductor quantum dots based on unipolar injection. The designs use new injection techniques that account for the electron wavefunction symmetries based on the height-to-base aspect ratios of self-organized quantum dots. The material systems being explored are InAs quantum dots grown within either GaAs-based or InP-based heterostructures. While GaAs-based quantum dots are better developed, InP-based quantum dots benefit from better conduction band alignment in the InAlAs/InGaAs heterostructures needed for mid-infrared sources.

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Document Details

Document Type
Technical Report
Publication Date
Nov 18, 2005
Accession Number
ADA447301

Entities

People

  • Dennis G. Deppe

Organizations

  • University of Texas at Austin

Tags

Communities of Interest

  • Advanced Electronics
  • Biomedical
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Abstracts
  • Aspect Ratio
  • Diffraction
  • Energy Bands
  • Energy Levels
  • Epitaxial Growth
  • Ground State
  • Heterojunctions
  • Quantum Cascade Lasers
  • Quantum Dots
  • Quantum States
  • Quantum Wells
  • Scattering
  • Semiconductor Devices
  • Semiconductor Lasers
  • Semiconductors
  • Transitions

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Quantum Computing