Spontaneous Growth of an InAs Nanowire Lattice in an InAs/GaSb Superlattice

Abstract

We describe a lattice of InAs nanowires that spontaneously organizes in three dimensions within an InAs/GaSb superlattice grown under high As4 flux. As characterized by x-ray diffraction and cross-sectional scanning tunneling microscopy, the periodic nanowires are ~10 nm high, 120 nm wide, and many microns long along [110], with face-centered cubic-like vertical ordering within the superlattice. The unusual vertical ordering creates a lateral composition modulation with half the period of the nanowires. The structure appears to arise from the InAs misfit stress combined with specific InAs and GaSb growth kinetic effects.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 2002
Accession Number
ADA447719

Entities

People

  • B. Z. Nosho
  • Brian R. Bennett
  • Lloyd J. Whitman
  • M. Goldenberg

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Air Platforms
  • Space

DTIC Thesaurus Topics

  • Crystal Lattices
  • Crystal Structure
  • Crystals
  • Electronic Mail
  • Films
  • Instability
  • Materials
  • Military Research
  • Modulation
  • Molecular Beam Epitaxy
  • Nanomaterials
  • Nanostructures
  • Nanowires
  • Quantum Dots
  • Substrates
  • Superlattices
  • Thickness

Readers

  • Materials Science and Engineering.
  • Nanocomposite Materials Science
  • Semiconductor Device Technology