Microgating Carbon Nanotube Field Emitters by In Situ Growth Inside Open Aperture Arrays

Abstract

Multiwalled carbon nanotubes were grown using chemical vapor deposition inside small apertures having a horizontal gate and a sidewall insulator spacer. Emission currents up to 140 nA per cell at 63 V have been obtained. These arrays have exhibited a gate current as low as 2.5% of the anode current throughout the entire gate voltage range, representing the lowest gate to anode current ratio of gated nanotube emitters reported to date. We attribute this feature to the emitter geometry and method of fabrication. The overall fabrication method required only a few and simple processing steps.

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Document Details

Document Type
Technical Report
Publication Date
Feb 23, 2002
Accession Number
ADA447756

Entities

People

  • David S. Y. Hsu

Organizations

  • United States Naval Research Laboratory

Tags

DTIC Thesaurus Topics

  • Carbon Nanotubes
  • Chemical Vapor Deposition
  • Chemistry
  • Diameters
  • Dielectrics
  • Electron Beam Lithography
  • Electron Microscopes
  • Emission
  • Emitters
  • Fabrication
  • Field Emission
  • Fullerenes
  • Materials
  • Materials Processing
  • Materials Science
  • Silicon Dioxide
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • Electrical Engineering
  • Electronics Engineering
  • Nanocomposite Materials Science

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene