High Luminance and Efficient GaN:Eu Inorganic EL Devices for Monochromatic Display Applications

Abstract

In this paper we report GaN:Eu AC-TDEL devices with high luminance and high efficiency levels obtained through optimized phosphor growth techniques and device structure. The GaN:Eu phosphor is grown using interrupted growth epitaxy (IGE[Trademark]). An improved thick dielectric layer (TDEL) for inorganic electroluminescent (EL) display devices has been achieved through a composite high-Kappa dielectric sol-gel/powder route. The reduction in thick dielectric porosity has improved the homogeneity of the electric field applied to the phosphor layer, resulting in a steeper luminance-voltage slope with a maximum luminance of ~1,000 cd/m2. Furthermore, the reduction in porosity has also decreased the diffuse reflection of the thick dielectric, which when pigmented, exhibits a diffuse reflectivity of <2% resulting in high display contrast.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 2004
Accession Number
ADA448147

Entities

People

  • Andrew Steckl
  • Chanaka Munasinghe

Organizations

  • University of Cincinnati

Tags

DTIC Thesaurus Topics

  • Barium Titanates
  • Dielectrics
  • Efficiency
  • Electric Fields
  • Emission
  • Films
  • Gray Scale
  • Lead Zirconate Titanates
  • Luminance
  • Materials
  • Materials Processing
  • Optical Properties
  • Phosphors
  • Standards
  • Substrates
  • Thin Films
  • Titanates

Fields of Study

  • Materials science

Readers

  • Human-Computer Interaction (HCI).
  • Nanocomposite Materials Science
  • Semiconductor Device Technology