Effect of Optical Excitation Energy on the Red Luminescence of Eu(3+) in GaN
Abstract
Photoluminescence (PL) excitation spectroscopy mapped the photoexcitation wavelength dependence of the red luminescence [(sup 5 D sub 0 to (sup 7 F sub 2d)] transition from GaN:Eu. Time-resolved PL measurements revealed that for excitation at the GaN bound exciton energy, the decay transients are almost temperature insensitive between 86 K and 300 K, indicating an efficient energy transfer process. However, for excitation energies above or below the GaN bound exciton energy, the decaying luminescence indicates excitation wavelength- and temperature-dependent energy transfer influenced by intrinsic and Eu(3+)-related defects.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 28, 2005
- Accession Number
- ADA448157
Entities
People
- A. J. Steckl
- C. W. Lee
- D. S. Lee
- H. O. Everitt
- H. Y. Peng
- J. M. Zavada
Organizations
- Duke University