Electronic Properties and Device Applications of III-V Compound Semiconductor Native Oxides
Abstract
Notre Dame has demonstrated the first gallium arsenide (GaAs)-based metal-oxide-semiconductor field-effect-transistor (MOSFET) utilizing a native oxide gate dielectric which has excellent microwave frequency performance and, due to its low gate leakage, promises both low-power operation and potential for superior power amplifier devices. We have shown that the wet-thermal native oxides of the compound semiconductor indium aluminum phosphide (InAlP) can be scaled to thicknesses required for devices (10- 20 nm) and still maintain their excellent electrical insulating properties and electrically-clean interfaces, making them well-suited for MOS electronic devices. Applications include reduced power consumption, enhanced performance electronic devices (both lowpower and high-power amplifiers) to extend battery life of portable or remotely-powered wireless communications equipment, of great potential interest to the military.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 02, 2006
- Accession Number
- ADA449186
Entities
People
- Bruce A. Bunker
- Douglas C. Hall
- Patrick J. Fay
- Russell D. Dupuis
- Thomas H. Kosel
Organizations
- University of Notre Dame