Terahertz Gain on Intersubband Transitions in Multilayer Delta-Doped p-GaAs Structures
Abstract
Report developed under contract for FA8718-05-00-0078. The purpose of the research was to theoretically test a concept for a terahertz laser that might be grown from GaAs using vapor-phase-epitaxial growth facilities at AFRL/SNHC Hanscom AFB. Monte Carlo simulation of hole transport in multilayer delta-doped p-GaAs/GaAs structures with crossed electric and magnetic fields applied were performed to investigate possibilities of the terahertz amplification by vertical inter-valence-band light-to-heavy hole transitions. The results are compared to those calculated for uniformly doped bulk p-GaAs and recently proposed p-Ge/Ge structures. The improvement in the gain for delta-doped p-GaAs structures is about 2 - 3 times over bulk p-GaAs. Terahertz laser generation in the proposed GaAs structure appears feasible. Potential applications for the considered laser device include sensing of chem/bio agents and explosives, biomedical imaging, non-destructive testing, and communications.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 05, 2006
- Accession Number
- ADA449493
Entities
People
- Robert E. Peale
Organizations
- University of Central Florida