Minority Carrier Lifetimes in Halide Chemical Vapor Deposition SiC
Abstract
High purity 6H-SiC single crystals have been grown by the Halide Chemical Vapor Deposition process. Growth was performed using separate injection of silicon silicon tetrachloride and propane. The growth rates were between 100 micrometers/hr and 300 micrometers/hr. The crystals show very low concentrations of residual impurities with the main contaminants, namely nitrogen and boron, in the 1014 cm-3 range. Crystals grown under Si-rich conditions were n-type with low room temperature electron concentration in the 1014-1015 cm-3 range and the 300K electron mobilities approaching 400 cm2/Vs The resistivity of the material increased up to 1010 OMEGAcm with increasing the C/Si ratio. Electron traps density decreases with the increase of C/Si ratio. Carrier lifetimes of HCVD material correlate with deep center concentrations. Lifetimes increase with increase of C/Si ratio and growth temperature.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 2006
- Accession Number
- ADA450433
Entities
People
- Marek Skowronski
Organizations
- Carnegie Mellon University