Proper Orthogonal Decomposition for Flow Calculations and Optimal Control in a Horizontal CVD Reactor
Abstract
Chemical vapor deposition (CVD) processes use a chemical reaction in the gas phase above the surface of the film to deposit desired materials onto a susceptor. CVD is a key element in a wide variety of industrial applications, ranging from the fabrication of microelectronic circuits, solar cells, and optical devices to the deposition of wear resistant coatings onto high performance machine tools. In a typical CVD reactor, a mixture of reactants and carrier gas is forced to flow across a heated susceptor. The temperature field from the heated susceptor induces gas phase reactions to produce activated species which then diffuse to the surface reaction layer and decompose to produce a thin film.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 23, 1998
- Accession Number
- ADA451227
Entities
People
- Hien T. Tran
- Hung V. Ly
Organizations
- North Carolina State University