Surface Reaction Kinetics of Ga(1-x)In(x)P Growth During Pulsed Chemical Beam Epitaxy

Abstract

The understanding of thin film growth processes and their control requires the development of surface-sensitive real-time optical characterization techniques that are able to provide insight into the surface reaction kinetics during an organometallic deposition process. These insights will allow us to move the control point closer to the point where the growth occurs, which in a chemical been epitaxy process is a surface reaction layer (SRL), built up of physisorbed and chemisorbed precursor fragments between the ambient and film interface. This contribution presents results on parameter estimations of rate constants and optical response factors in a reduced order surface kinetics (ROSK) model, which has been developed to describe the decomposition and growth kinetics of the involved organometallic precursors and their incorporation in the film deposition.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2000
Accession Number
ADA451885

Entities

People

  • H. T. Tran
  • J. W. Schmidt
  • N. Dietz
  • S. C. Beeler

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Abstracts
  • Chemical Kinetics
  • Chemical Reactions
  • Experimental Data
  • Films
  • Information Operations
  • Instructions
  • Kinetics
  • North Carolina
  • Precursors
  • Substrates
  • Surface Reactions
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Robotics and Automation.
  • Theoretical Analysis.
  • Thin Film Deposition Science.