In Situ Experimental Studies of Fundamental Degradation Processes in the Low Earth Orbit Environment
Abstract
The primary accomplishment of this MURI team was demonstrating that completed different oxides form due to exposure to hyperthermal atomic oxygen, and, hence, novel oxidation mechanisms are needed to explain such unusual oxide structures. ITO: the reactivity of AO causes recrystallization of the ITO nanograins along the interface between the ITO and substrate, which would negatively affect the film adhesion. Si: Remarkably homogeneous and uniform oxides form that are thicker and more ordered towards the alpha quartz structure than the oxide formed by O2 exposure, due to the high reactivity of the AO and its kinetic energy. Ge: The effect of the AO is to produce smaller nanograins of crystalline GeO2 as compared to 02, where increasing the kinetic energy increases the oxide thickness. Al: The AO causes initial vaporization and corresponding roughening of the Al surface prior to the growth of the amorphous oxide scale, which could be due to the information of gaseous and stable AlO2.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 2006
- Accession Number
- ADA452031
Entities
People
- Judith C. Yang
Organizations
- University of Pittsburgh