Characterization of Passivated Indium Antimonide

Abstract

Infrared absorption and photoluminescence measurements have been used to optically characterize bulk-grown, 680 micrometers thick, indium antimonide (InSb), both as-grown and after passivation by either anodization or a 700 Angstrom layer of silicon oxide (SiOx). Spectra were obtained using Fourier transform infrared (FT-IR) spectroscopy. Results include the effects of sample temperature in the range of 10 - 300 K and 4.636 micrometers laser pump power in the range of 28 mW to 1.43 W for the photoluminescence spectrum.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2006
Accession Number
ADA454283

Entities

People

  • Catherine A. Taylor

Organizations

  • Air Force Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Compound Semiconductors
  • Crystal Structure
  • Crystals
  • Energy Bands
  • Energy Gaps
  • Fermi Levels
  • Indium Antimonides
  • Measurement
  • Optical Properties
  • Optics
  • Quantum Mechanics
  • Semiconductor Devices
  • Semiconductors
  • Solid State Physics
  • Spectra
  • Spectroscopy

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers