Growth and Characterization of Large Diameter CdNzTe Crystals

Abstract

The report summarizes the activities during the whole contract period. Parts of the results were presented in Progress Reports No. 1 and 2 and will not be repeated in detail. The goal of the effort was aimed to test the middle-pressure setup after completion and modification. Several boules were grown, wafers with dimensions 10x10 sq mm were fabricated and delivered to NVESD. New wafers with dimensions 10x10 sq mm and 20x20 sq mm are delivered in parallel to this report. As was reported in Progress Report No. 2 additional annealing approach has been developed in order to decrease the size of inclusions to the size acceptable for MBE growth for cases, where inclusion formation was not suppressed during the growth. The main goal was to look for such annealing conditions, when inclusion size and density is decreased and the crystal microstructure is not damaged during the annealing process. A future outlook based on the results of a longer-term effort in CZT growth and substrate fabrication in the Institute of Physics, Charles University in Prague is presented.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 2006
Accession Number
ADA454504

Entities

People

  • Pavel Hoeschl

Organizations

  • Charles University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Basic Programming Language
  • Computer Programs
  • Computers
  • Contracts
  • Control Systems
  • Cooling
  • Crystal Growth
  • Crystals
  • Diameters
  • Heating Elements
  • Internal Pressure
  • Materials
  • Mathematics
  • Measurement
  • Surface Roughness
  • Temperature Gradients
  • X Rays

Fields of Study

  • Materials science

Readers

  • Materials Science (Mechanical Engineering).
  • Semiconductor Device Technology
  • Technical Research and Report Writing.