MOCVD Growth and Etching of N-Type GaN Layers on HPVE-Grown Templates and Free-Standing GaN Substrates

Abstract

This report results from a contract tasking Radboud University Nijmegen as follows: The Grantee will investigate the removal of dislocations from the GaN epitaxial layer by defect-selective etching technique and comparing properties of the as-grown (i.e. containing dislocations) and dislocation-free material. This approach will allow electrical or optical measurements on the epitaxial layers with and without dislocations. The influence of dislocations on the measured material properties will also be assessed.

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Document Details

Document Type
Technical Report
Publication Date
Jun 10, 2005
Accession Number
ADA455284

Entities

People

  • J.L. Weyher

Organizations

  • Radboud University Nijmegen

Tags

DTIC Thesaurus Topics

  • Abstracts
  • Contracts
  • Department Of Defense
  • Dislocations
  • Information Operations
  • Materials
  • Semiconductors
  • Substrates
  • Template Patterns
  • Universities

Fields of Study

  • Materials science

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