Electrically-Gated Ferromagnetism in Semiconductor Nanostructures

Abstract

The aim of this project was to demonstrate the electrical gating of the magnetic response in magnetically-doped semiconductor nanostructures. The PI at Penn State (Samarth) developed a variety of different materials for this purpose using molecular beam epitaxy, and then worked in a close collaborative effort with the PI at Stanford (Goldhaber-Gordon) on magneto-transport measurements of these systems. The principal result was the demonstration of a new phenomenon: an electrically-tunable anomalous Hall effect in magnetically-doped two-dimensional electron gases.

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 2006
Accession Number
ADA455813

Entities

People

  • Nitin Samarth

Organizations

  • Pennsylvania State University

Tags

DTIC Thesaurus Topics

  • California
  • Condensed Matter Physics
  • Contracts
  • Electron Gas
  • Electrons
  • Geometry
  • Hall Effect
  • Heterojunctions
  • Magnetic Materials
  • Materials
  • Nanostructures
  • Physics
  • Quantum Dots
  • Semiconductors
  • Subatomic Particles
  • Transport Ships
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Research Science/Academic Research

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene