Molecular Beam Epitaxy on Aligned Carbon Nanotube Arrays for Nanoelectronic Applications

Abstract

The result on molecular beam epitaxy of GaAs and AlGaAs using carbon nanotubes (CNTs) as a crystalline seed is reported. At the growth temperature T sub G >or= 600 C, GaAs wraps around CNTs forming wirelike configuration, while Al composites form dot-like formation. At T sub G < 550 C, both GaAs and AlGaAs form dot-like droplets along CNTs. Raman and XRD show the dots and wires of III-arsenide on CNTs have well-defined crystalline structure. And, the results also are indicative that tangential phonon mode and inter-atomic spacing of CNTs are affected by the interfacing of CNTs and III-V's.

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Document Details

Document Type
Technical Report
Publication Date
Aug 26, 2006
Accession Number
ADA455928

Entities

People

  • Jong C. Woo

Organizations

  • Seoul National University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Carbon Nanotubes
  • Composite Materials
  • Compound Semiconductors
  • Condensed Matter Physics
  • Epitaxial Growth
  • Fullerenes
  • G Band
  • Materials
  • Materials Processing
  • Materials Science
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optical Properties
  • Optoelectronic Devices
  • Raman Spectroscopy
  • Semiconductors
  • Spectra

Fields of Study

  • Materials science

Readers

  • Nanoscale Plasmonic Nanotechnology
  • Semiconductor Device Technology

Technology Areas

  • Space