Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) Nanorods Superlattice (SL)

Abstract

This work demonstrates realization of high-brightness and high-efficiency light emitting diodes (LEDs) using dislocation-free InGaN/GaN SL Nano rods arrays (NRAs) by hydride vapor phase epitaxy (HVPE). The benefits of the InGaN/GaN supperlattice (SL) nanorod array (NRA) LEDs are examined in this work, and their characteristics are compared to those of conventional broad area (BA) LEDs.

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Document Details

Document Type
Technical Report
Publication Date
Mar 10, 2006
Accession Number
ADA455946

Entities

People

  • Tae W. Kang

Organizations

  • Dongguk University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Brightness
  • Compound Semiconductors
  • Crystal Structure
  • Dislocations
  • Efficiency
  • Electron Microscopes
  • Electron Microscopy
  • Gallium
  • Gallium Nitrides
  • Heat Of Activation
  • Microscopes
  • Nitrides
  • Optical Properties
  • Optics
  • Quantum Efficiency
  • Semiconductors
  • Vapor Phases

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics