High Efficiency Class-F MMIC Power Amplifiers at Ku-Band

Abstract

Two high efficiency Ku-band pHEMT power amplifier MMICs are presented in this paper. A single, stage, high efficiency amplifier provides a peak power added efficiency of 57.6% with 10.5 dB associated gain and 26.5 dBm output power into a 50 Ohms load at 14 GHz. Additionally, a dual stage, high gain amplifier provides a peak power added efficiency of 50.4% with 19.7 dB associated gain and 27.5 dBm output power into a 50 Ohms load at 14.3 GHz. State-of-the-art efficiency performance at these frequencies is achieved through Class-F transistor operation. Process selection, circuit design, and measured results are described.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2005
Accession Number
ADA456277

Entities

People

  • Matthew T. Ozalas

Organizations

  • MITRE Corporation

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Amplifiers
  • Bandwidth
  • Circuits
  • Communication Systems
  • Efficiency
  • Frequency
  • High Electron Mobility Transistors
  • High Gain
  • Integrated Circuits
  • Ku Band
  • Microwave Frequency
  • Monolithic Microwave Integrated Circuits
  • Power Amplifiers
  • Power Gain
  • Radio Frequency
  • Semiconductor Devices
  • Semiconductors

Readers

  • Electronics Engineering