Top vs. Bottom Charging of the Dielectric in RF MEMS Capacitive Switches (Preprint)

Abstract

Using a movable top electrode, for the first time, top vs. bottom charging of the dielectric in metal/insulator/metal capacitors is delineated. For the Al/SiO2/Cr structure used in RF MEMS capacitive switches, charge injection from Al into the top of SiO2 was found to have a higher threshold voltage, faster charging time, and slower discharging time than charge injection from Cr into the bottom of SiO2. The higher threshold is attributed to non-ideal contact geometry and chemistry. The faster charging time is attributed to the exponential voltage dependence. The slower discharging time is attributed to diffusion across SiO2. Since top charging is more critical to switch performance and reliability than bottom charging, understanding the trade off of top versus bottom charging can help minimize their undesirable effects.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 2006
Accession Number
ADA457244

Entities

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  • Charles L. Goldsmith
  • David Forehand
  • James C. M. Hwang
  • Xiabin Yuan
  • Zhen Peng

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  • Sensors

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  • Microelectronics
  • Microelectronics - Graphene
  • Microelectronics - Microelectromechanical Systems