Spectral and Time-Resolved Photoluminescence Studies of Eu-Doped GaN
Abstract
We report on spectral and time-resolved photoluminescence (PL) studies performed on Eu-doped GaN prepared by solid-source molecular-beam epitaxy. Using above-gap excitation, the integrated PL intensity of the main Eu3+ line at 622.3 nm (5D0->7F2 transition) decreased by nearly 90% between 14 K and room temperature. Using below-gap excitation, the integrated intensity of this line decreased by only ~50% for the same temperature range. In addition, the Eu31 PL spectrum and decay dynamics changed significantly compared to above-gap excitation. These results suggest the existence of different Eu31 centers with distinct optical properties. Photoluminescence excitation measurements revealed resonant intra-4f absorption lines of Eu3+ ions, as well as a broad excitation band centered at ;400 nm. This broad excitation band overlaps higher lying intra-4f Eu3+ energy levels, providing an efficient pathway for carrier-mediated excitation of Eu3+ ions in GaN.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 17, 2003
- Accession Number
- ADA457837
Entities
People
- A. J. Steckl
- D. S. Lee
- Ei E. Nyein
- J. Heikenfeld
- J. M. Zavada
- U. Hömmerich
Organizations
- Hampton University