Photoluminescence Properties of in situ Tm-Doped Al(x)Ga(1-x)N

Abstract

We report on the photoluminescence (PL) properties of in situ Tm-doped AlxGa1-xN films (0<x <1) grown by solid-source molecular-beam epitaxy. It was found that the blue PL properties of AlxGa1-xN:Tm greatly change as a function of Al content. Under above-gap pumping, GaN:Tm exhibited a weak blue emission at ~ 478 nm from the 1G4->3H6 transition of Tm3+. Upon increasing Al content, an enhancement of the blue PL at 478 nm was observed. In addition, an intense blue PL line appeared at ~465 nm, which is assigned to the 1D2->3F4 transition of Tm3+. The overall blue PL intensity reached a maximum for x=0.62, with the 465 nm line dominating the visible PL spectrum. Under below-gap pumping, AlN:Tm also exhibited intense blue PL at 465 and 478 nm, as well as several other PL lines ranging from the ultraviolet to near-infrared. The Tm3 + PL from AlN:Tm was most likely excited through defect-related complexes in the AlN host.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 2003
Accession Number
ADA457840

Entities

People

  • A. J. Steckl
  • D. S. Lee
  • Ei E. Nyein
  • J. M. Zavada
  • U. Hömmerich

Organizations

  • Hampton University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Copyrights
  • Efficiency
  • Emission
  • Energy
  • Energy Bands
  • Energy Levels
  • Energy Transfer
  • Excitation
  • High Resolution
  • Intensity
  • Low Temperature
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Photoluminescence
  • Repetition Rate
  • Spectra
  • Transitions

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology