Optical and Structural Properties of Er3(+)-Doped GaN Grown by MBE

Abstract

We report the morphological and compositional characteristics of Er-doped GaN grown by MBE on Si(111) substrates and their effect on optical properties. The GaN was grown by molecular beam epitaxy using solid sources (for Ga and Er) and a plasma gas source for N2. The films emit by photoexcitation in the visible and near infrared wavelengths from the Er atomic levels. The morphology of the GaN:Er films was examined by AFM. Composition was determined by SIMS depth profiling that revealed a large Er concentration at 4.5 x 10(exp 21) atoms/cu cm accompanied by a high oxygen impurity concentration.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1999
Accession Number
ADA457866

Entities

People

  • A. J. Steckl
  • A.A.M. Saleh
  • D. S. Lee
  • J. M. Zavada
  • R. G. Wilson
  • R. H. Birkhahn
  • R. Hudgins

Organizations

  • University of Cincinnati

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Chemistry
  • Elements
  • Energy Levels
  • Impurities
  • Luminescence
  • Mass Spectrometry
  • Materials
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optical Properties
  • Optoelectronic Devices
  • Semiconductors
  • Silicon Carbide
  • Solid State Physics
  • Structural Properties
  • Substrates

Fields of Study

  • Materials science

Readers

  • Nanofabrication and Microfabrication.
  • Semiconductor Device Technology