In Situ Studies of Defect Nucleation During the PVT and CVD Growth of Silicon Carbide Single Crystals

Abstract

A complete chemical vapor deposition (CVD) system for growing SiC epitaxial films and bulk crystals was set up using commercially procured gas flow controls and scrubber units, and integrating them with a modified in-house designed growth chamber that has options for in situ X-ray topographic study. This CVD system uses silicon tetrachloride (SiCl4), silane (SiH4), propane (C3H8), hydrogen (H2) and argon (Ar) gases. The aggressive SiCl4 corrosion in the chamber and the gas lines has been investigated and found to be predominantly related to moisture, and this severe problem has been solved by keeping the gas lines and the growth reactor in vacuum or in inert atmosphere when the CVD system is not running.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 2006
Accession Number
ADA458217

Entities

People

  • Michael Dudley

Organizations

  • Stony Brook University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Ceramic Materials
  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Controlled Atmospheres
  • Crystal Growth
  • Crystals
  • Electron Microscopy
  • Films
  • Flow
  • Gas Flow
  • Grain Boundaries
  • High Resolution
  • Materials
  • Materials Science
  • Silicon Carbide
  • Vapor Deposition
  • X Rays

Readers

  • Combustion science or combustion engineering.
  • Software Engineering
  • Thin Film Deposition Science.